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FUJITSU  MB85RC16PNF-G-JNE1  芯片, 存储器, FRAM, 16K, I2C, 3V, 8SOP

FUJITSU MB85RC16PNF-G-JNE1
Technical Data Sheet (602.70KB) EN 查看所有技术文档

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产品概述

The MB85RC16PNF-G-JNE1 is a 16kB I²C Ferroelectric Random Access Memory (FRAM) chip in a configuration of 2048 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC16 is able to retain data without using a data backup battery. The memory cells used in the MB85RC16 have at least 10¹⁰ read/write operation endurance per bit, which is a significant improvement over the number of read and write operations supported by other nonvolatile memory products. The MB85RC16 can provide writing in one byte units because the long writing time is not required unlike flash memory and E²PROM. Therefore, the writing completion waiting sequence like a write busy state is not required.
  • Operating frequency - 1MHz maximum
  • 2-wire serial interface
  • Operating power supply voltage - 2.7 to 3.6V
  • Low power consumption
  • Data retention - 10 years

产品信息

存储器容量:
16Kbit
NVRAM 内存配置:
2K x 8位
电源电压最小值:
2.7V
电源电压最大值:
3.6V
封装类型:
SOIC
针脚数:
8引脚
芯片接口类型:
I2C
存取时间:
-
工作温度最小值:
-40°C
工作温度最高值:
85°C
封装:
每个
MSL:
MSL 3 - 168小时
产品范围:
-
SVHC(高度关注物质):
To Be Advised

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应用

  • 计算机和计算机周边;
  • 工业

法律与环境

潮湿敏感级别:
MSL 3 - 168小时
原产地:
China

进行最后一道重要生产流程所在的国家

RoHS 合规:
税则号:
85423290
重量(千克):
.004196

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