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DE150-501N04A
晶体管, 射频FET, 500 V, 4.5 A, 200 W, 100 MHz, DE-150
产品概述
The DE150-501N04A is a N-channel enhancement mode RF Power MOSFET with isolated substrate for excellent thermal transfer and increased temperature and power cycling. Low gate charge and capacitances easier to drive and no beryllium oxide or other hazardous materials.
- Low Qg and Rg
- High dv/dt rating
- Nanosecond switching
应用
射频通信
产品信息
技术文档 (3)
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| 数量 | 单价（含增值税） | 您所支付金额（含增值税） |
|---|---|---|
| 1+ | CNY272.69 (CNY308.14) | ( ) |
| 10+ | CNY262.50 (CNY296.63) | ( ) |
| 25+ | CNY258.81 (CNY292.46) | ( ) |
定价不可用。 请联系客户服务。
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