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DE475-102N21A
晶体管, 射频FET, 1 kV, 24 A, 1.8 kW, 30 MHz, DE-475
产品概述
DE475-102N21A是一款1000V N沟道增强模式射频功率MOSFET, 具有低RDS (on), 适用于激光驱动器, 感应加热, 开关模式电源与开关工业应用.
- 高反向电压
- 优秀的热转移
- 提升温度与功率循环能力
- IXYS先进的低Qg工艺
- 低栅极电荷与电容, 提供更容易驱动和更快速切换
- 非常低的插入电感
- 无氧化铍 (BeO)或其他有害物质
- 易于安装, 无需绝缘器
- 高功率密度
应用
电源管理, 工业
产品信息
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CAD Models and drawings are provided to you on a revocable limited licence for your internal use only but remain the property of the manufacturer who retain all intellectual property rights and ownership. They are provided to assist you in decision making and as design guide but are not guaranteed to be error free, accurate or up to date and is not intended to be taken as advice.
Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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