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IXZ308N120
晶体管, 射频FET, 1.2 kV, 8 A, 880 W, DE-375
产品概述
The IXZ308N120 is a 1200V N-channel Enhancement Mode RF Power MOSFET with low RDS (on) ideal for laser driver, induction heating, switch mode power supplies and switching industrial applications.
- High isolation voltage
- Excellent thermal transfer
- Increased temperature and power cycling capability
- IXYS advanced low Qg process
- Low gate charge and capacitances offer easier to drive and faster switching
- Very low insertion inductance
- No beryllium oxide (BeO) or other hazardous materials
- Easy to mount, no insulators needed
- High power density
应用
HVAC, 电源管理, 工业
警告
该产品的市场需求较大, 导致交货时间延长, 交货日期可能会有延迟.
产品信息
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