功率场效应管, MOSFET, N沟道, 300 V, 40 A, 0.085 ohm, TO-247, 通孔
- Rugged polysilicon gate cell structure
- Unclamped Inductive Switching (UIS) rated
- Low inductance offers easy to drive and protect
- Fast intrinsic rectifier
- Space-saving s
- High power density
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