功率场效应管, MOSFET, N沟道, 500 V, 24 A, 0.23 ohm, TO-247, 通孔
- International standard packages
- Low RDS (ON) HDMOS™ process
- Rugged polysilicon gate cell structure
- Low package inductance (<5nH) - Easy to drive and to protect
- Easy to mount with 1 screw (isolated mounting screw hole)
- Space saving
CAD Models - Notice
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Use of these CAD models and other options provided are downloaded and used entirely at your own risk and by continuing you confirm acceptance of the above.
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