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GAN063-650WSAQ
GAN063-650WSAQ - Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

3106435

Gallium Nitride (GaN) Transistor, Gan FET, 650 V, 34.5 A, 0.06 ohm, 15 nC, TP-247, Through Hole

NEXPERIA

TRANSISTOR, JFET, 650V, TO-247; Breakdown Voltage Vbr:650V; Zero Gate Voltage Drain Current Idss Min:-; Zero Gate Voltage Drain Current Idss Max:-; Gate-Source Cutoff Voltage Vgs(off) Max:-; Transistor Case Style:TO-247; Transistor Type:JFET; No. of Pins

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