81A Silicon Carbide (SiC) MOSFETs & Modules | element14 China

Find a huge range of 81A Silicon Carbide (SiC) MOSFETs & Modules at element14 China. We stock a wide range of Silicon Carbide (SiC) MOSFETs & Modules, such as 30A, 17A, 31A & 40A Silicon Carbide (SiC) MOSFETs & Modules from the worlds top manufacturers including: Onsemi, Infineon & Rohm

Manufacturer

MOSFET Module Configuration

Channel Type

Continuous Drain Current Id

Drain Source Voltage Vds

Drain Source On State Resistance

Transistor Case Style

No. of Pins

Rds(on) Test Voltage

Gate Source Threshold Voltage Max

Power Dissipation

Operating Temperature Max

Product Range

Packaging

Filter(s) Applied

Continuous Drain Current Id

:

81A

1 Filter(s) Selected

Compare					Price For		Quantity

	NTH4L028N170M1.	4070487 RoHS	ONSEMI MOSFET N-CH 1.7KV 81A TO-247		Each	1+ CNY271.820 (CNY307.1566) 5+ CNY261.620 (CNY295.6306) 10+ CNY251.410 (CNY284.0933) 50+ CNY241.200 (CNY272.556) 100+ CNY230.990 (CNY261.0187)	Min: 1 / Mult: 1	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	TUK SGACK902S Keystone Coupler
	SCT4018KEC11	3935389 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 81 A 1.2 kV 0.018 ohm TO-247N		Each	1+ CNY169.800 (CNY191.874) 5+ CNY168.390 (CNY190.2807) 10+ CNY166.960 (CNY188.6648) 50+ CNY165.530 (CNY187.0489) 100+ CNY164.100 (CNY185.433)	Min: 1 / Mult: 1	Single	N Channel	81A	1.2kV	0.018ohm	TO-247N	3Pins	18V	4.8V	312W	175°C	-
	SCT4018KRC15	3935382 Data Sheet RoHS	ROHM Silicon Carbide MOSFET Single N Channel 81 A 1.2 kV 0.018 ohm TO-247		Each	1+ CNY260.430 (CNY294.2859) 5+ CNY237.890 (CNY268.8157) 10+ CNY215.340 (CNY243.3342) 50+ CNY206.820 (CNY233.7066) 100+ CNY198.290 (CNY224.0677)	Min: 1 / Mult: 1	Single	N Channel	81A	1.2kV	0.018ohm	TO-247	4Pins	18V	4.8V	312W	175°C	-
	IMDQ75R020M1HXUMA1	4439891RL Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 81 A 750 V 0.018 ohm HDSOP		Each (Supplied on Cut Tape) Re-Reel Packaging Options	10+ CNY88.130 (CNY99.5869) 50+ CNY86.600 (CNY97.858) 100+ CNY85.060 (CNY96.1178) 250+ CNY83.370 (CNY94.2081)	Min: 10 / Mult: 1	-	-	81A	750V	0.018ohm	-	22Pins	20V	5.6V	326W	175°C	-
	UJ4C075018K3S	4221966 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 81 A 750 V 18 mohm TO-247		Each	1+ CNY129.410 (CNY146.2333) 5+ CNY115.240 (CNY130.2212) 10+ CNY101.070 (CNY114.2091) 50+ CNY99.050 (CNY111.9265) 100+ CNY98.210 (CNY110.9773) More Pricing...	Min: 1 / Mult: 1	Single	N Channel	81A	750V	18mohm	TO-247	3Pins	12V	6V	385W	175°C	-
	UJ4C075018K4S	4221974 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 81 A 750 V 18 mohm TO-247		Each	1+ CNY126.470 (CNY142.9111) 5+ CNY118.210 (CNY133.5773) 10+ CNY109.950 (CNY124.2435) 50+ CNY107.840 (CNY121.8592) 100+ CNY105.720 (CNY119.4636) More Pricing...	Min: 1 / Mult: 1	Single	N Channel	81A	750V	18mohm	TO-247	4Pins	12V	6V	385W	175°C	-
	NTH4L028N170M1	4079791 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET EliteSiC Single N Channel 81 A 1.7 kV 0.028 ohm TO-247		Each	1+ CNY271.820 (CNY307.1566) 5+ CNY236.870 (CNY267.6631) 10+ CNY201.900 (CNY228.147) 50+ CNY201.830 (CNY228.0679) 100+ CNY197.800 (CNY223.514)	Min: 1 / Mult: 1	Single	N Channel	81A	1.7kV	0.028ohm	TO-247	4Pins	20V	4.3V	535W	175°C	EliteSiC Series
	IMDQ75R020M1HXUMA1	4439891 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 81 A 750 V 0.018 ohm HDSOP		Each (Supplied on Cut Tape) Cut Tape Packaging Options	1+ CNY103.410 (CNY116.8533) 5+ CNY95.770 (CNY108.2201) 10+ CNY88.130 (CNY99.5869) 50+ CNY86.600 (CNY97.858) 100+ CNY85.060 (CNY96.1178) More Pricing...	Min: 1 / Mult: 1	Single	N Channel	81A	750V	0.018ohm	HDSOP	22Pins	20V	5.6V	326W	175°C	CoolSiC G1 Series
	IMT65R026M2HXUMA1	4677111 Data Sheet RoHS	INFINEON Silicon Carbide MOSFET Single N Channel 81 A 650 V 0.024 ohm HSOF		Each (Supplied on Cut Tape) Cut Tape	1+ CNY81.750 (CNY92.3775) 5+ CNY64.770 (CNY73.1901) 10+ CNY55.350 (CNY62.5455) 50+ CNY52.210 (CNY58.9973) 100+ CNY49.000 (CNY55.370) More Pricing...	Min: 1 / Mult: 1	Single	N Channel	81A	650V	0.024ohm	HSOF	8Pins	20V	5.6V	365W	175°C	CoolSiC Gen 2 Series

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