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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY88.230 (CNY99.6999) |
| 5+ | CNY78.420 (CNY88.6146) |
| 10+ | CNY68.600 (CNY77.518) |
| 50+ | CNY63.920 (CNY72.2296) |
| 100+ | CNY59.240 (CNY66.9412) |
| 250+ | CNY55.570 (CNY62.7941) |
Product Information
Product Overview
The IPW65R045C7 is a 650V N-channel CoolMOS™ Power MOSFET providing the world's lowest RDS (on) with low switching losses and efficiency improvements over the full load range. The new CoolMOS™ C7 series offers a ~50% reduction in turn-off losses (Eoss) compared to the CoolMOS™ CP, offering a GaN-like level of performance in PFC, TTF and other hard-switching topologies. The CoolMOS™ MOSFET offers a significant reduction of conduction, switching and driving losses and enable high power density and efficiency for superior power conversion systems. The latest state-of-the-art generation of high voltage power MOSFETs makes AC-DC power supplies more efficient, more compact, lighter and cooler than ever before.
- Reduced energy stored in output capacitance (Eoss)
- Lower gate charge
- Space-saving through reduction of parts
- Improved safety margin
- Lowest conduction losses
- Low switching losses
- Better light load efficiency
- Increasing power density
Applications
Communications & Networking, Computers & Computer Peripherals, Alternative Energy, Power Management
Technical Specifications
N Channel
46A
TO-247
10V
227W
150°C
-
No SVHC (21-Jan-2025)
650V
0.04ohm
Through Hole
3.5V
3Pins
-
-
Technical Docs (3)
Alternatives for IPW65R045C7FKSA1
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Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate