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CSD88537NDT
MOSFET, DUAL N-CH, 60V, 15A, SOIC-8
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49 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY9.770 (CNY11.0401) |
| 500+ | CNY8.710 (CNY9.8423) |
| 1000+ | CNY7.660 (CNY8.6558) |
| 5000+ | CNY6.720 (CNY7.5936) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY977.00 (CNY1,104.01 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerTEXAS INSTRUMENTS
Manufacturer Part NoCSD88537NDT
Order Code3125082RL
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id15A
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)0.0125ohm
Continuous Drain Current Id N Channel15A
Continuous Drain Current Id P Channel15A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.0125ohm
Drain Source On State Resistance P Channel0.0125ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd2.1W
No. of Pins8Pins
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2018)
Product Overview
The CSD88537NDT is a NexFET™ dual N-channel Power MOSFET designed to serve as a half bridge in low current motor control applications.
- Ultra-low Qg and Qgd
- Avalanche rated
- Halogen-free
Applications
Industrial, Motor Drive & Control, Power Management
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
15A
On Resistance Rds(on)
0.0125ohm
Continuous Drain Current Id P Channel
15A
Drain Source On State Resistance N Channel
0.0125ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2018)
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
15A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.0125ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.1W
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
Tariff No:85412900
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2018)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001