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TPH3R10AQM,LQ(M1
Power MOSFET, N Channel, 100 V, 120 A, 0.0025 ohm, SOP Advance, Surface Mount
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ManufacturerTOSHIBA
Manufacturer Part NoTPH3R10AQM,LQ(M1
Order Code3976769
Also Known AsTPH3R10AQM1, TPH3R10AQM,LQ
Technical Datasheet
1,409 In Stock
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1409 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 5+ | CNY11.100 (CNY12.543) |
| 50+ | CNY10.240 (CNY11.5712) |
| 250+ | CNY9.360 (CNY10.5768) |
| 1000+ | CNY8.490 (CNY9.5937) |
| 3000+ | CNY7.610 (CNY8.5993) |
Price for:Each (Supplied on Cut Tape)
Minimum: 5
Multiple: 5
CNY55.50 (CNY62.71 inc GST)
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Product Information
ManufacturerTOSHIBA
Manufacturer Part NoTPH3R10AQM,LQ(M1
Order Code3976769
Also Known AsTPH3R10AQM1, TPH3R10AQM,LQ
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id120A
Drain Source On State Resistance0.0025ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation210W
No. of Pins8Pins
Operating Temperature Max175°C
Product Range-
Qualification-
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3.5V
No. of Pins
8Pins
Product Range
-
Drain Source Voltage Vds
100V
Drain Source On State Resistance
0.0025ohm
Rds(on) Test Voltage
10V
Power Dissipation
210W
Operating Temperature Max
175°C
Qualification
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001