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VSMB1940X01
Infrared Emitter, 940 nm, 60 °, 0805, 6 mW/Sr, 15 ns, 15 ns
Image is for illustrative purposes only. Please refer to product description.
ManufacturerVISHAY
Manufacturer Part NoVSMB1940X01
Order Code1779752
Product RangeGaAlAs Double Hetero IR Diode
Technical Datasheet
49 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY6.700 (CNY7.571) |
| 10+ | CNY4.660 (CNY5.2658) |
| 25+ | CNY4.250 (CNY4.8025) |
| 50+ | CNY3.840 (CNY4.3392) |
| 100+ | CNY3.420 (CNY3.8646) |
| 500+ | CNY2.880 (CNY3.2544) |
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CNY6.70 (CNY7.57 inc GST)
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Product Information
ManufacturerVISHAY
Manufacturer Part NoVSMB1940X01
Order Code1779752
Product RangeGaAlAs Double Hetero IR Diode
Technical Datasheet
Peak Wavelength940nm
Angle of Half Intensity60°
Diode Case Style0805
Radiant Intensity (Ie)6mW/Sr
Rise Time15ns
Fall Time tf15ns
Forward Current If(AV)100mA
Forward Voltage VF Max1.35V
Operating Temperature Min-40°C
Operating Temperature Max85°C
Automotive Qualification StandardAEC-Q101
Product RangeGaAlAs Double Hetero IR Diode
MSLMSL 3 - 168 hours
SVHCNo SVHC (07-Nov-2024)
Product Overview
The VSMB1940X01 is an infrared, 940nm emitting diode in GaAlAs Double Hetero technology with high radiant power and high speed, moulded in clear, untinted 0805 plastic package for surface mounting (SMD). It is suitable for use in high speed IR data transmission, high power emitter for low space applications, high performance transmissive or reflective sensors.
- Package form: 0805
- Dimensions (L x W x H in mm): 2 x 1.25 x 0.85
- Peak wavelength: λp = 940nm
- High radiant intensity
- Angle of half sensitivity: ϕ = ±60°
- Low forward voltage
- Suitable for high pulse current operation
Technical Specifications
Peak Wavelength
940nm
Diode Case Style
0805
Rise Time
15ns
Forward Current If(AV)
100mA
Operating Temperature Min
-40°C
Automotive Qualification Standard
AEC-Q101
MSL
MSL 3 - 168 hours
Angle of Half Intensity
60°
Radiant Intensity (Ie)
6mW/Sr
Fall Time tf
15ns
Forward Voltage VF Max
1.35V
Operating Temperature Max
85°C
Product Range
GaAlAs Double Hetero IR Diode
SVHC
No SVHC (07-Nov-2024)
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85414100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (07-Nov-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000191