Infineon Technologies 具有无与伦比的可靠性、多样性和系统优势的 CoolSiC™ 产品。 来自 Infineon 的 SiC 技术!
作为拥有 20 多年碳化硅 (SiC) 技术开发经验的领先电力供应商,Infineon 已经为更智能、更高效的电力生产、传输和消费需求做好了准备。 Infineon 的专家深知降低系统复杂性必不可少的条件,从而降低中高功率系统的系统成本,减小尺寸。
借助于 Infineon 广泛的产品组合,满足最高质量标准、长系统寿命和可靠性得到了保证。 Infineon 拥有完整的供应链,并为 Si、GaN 和 SiC 提供不偏不倚的设计支持。与 Infineon 这家值得信赖的 SiC 供应商合作,投身变革,而这场变革与您的个人设计和系统要求无关。
碳化硅 CoolSiC™ MOSFET 模块
英飞凌 CoolSiC™ MOSFET 功率模块系列可为逆变器设计人员带来新的机会,助力实现前所未有的效率和功率密度。碳化硅 (SiC) 半导体用作开关时,支持更高的工作温度和开关频率,从而提升整体系统效率。
我们的 CoolSiC™ 碳化硅功率模块可针对不同的应用需求进行定制。凭借从 52.9 mOhm 到 1.44 mOhm RDS 的多种拓扑结构,您可以选择与您特定需求完美契合的模块。无论您需要三电平、半桥、fourpack、sixpack 或 Boost 升压电路,我们的 1200 V和 2000 V SiC MOSFET 模块都能满足您的需求。
得益于先进的沟槽设计,1200 V 和 2000 V SiC MOSFET 模块具有卓越的栅极氧化可靠性及一流的开关和导通损耗,树立了新的性能标准。所有 EasyPACK™、EasyDUAL™ 和 62 mm CoolSiC™ MOSFET 功率模块不仅可订购预涂导热介质 (TIM) 版本,而且还可以提供具有其它特性的版本。例如,我们采用高性能氮化铝 (AlN) 陶瓷的 Easy 模块大大改善了 RthJH 散热性能。
让 CoolSiC™ 成为您的应用的一部分
CoolSiC™ - 客户成功案例
冷分流技术
CoolSiC™ - 沟槽技术 - 值得您信赖的技术变革
CoolSiC™ - 伺服驱动的完美解决方案
CoolSiC™ MOSFET 在伺服驱动中的应用
微学习:CoolSiC™ MOSFET 在电动汽车充电中的应用
Infineon 的 CoolSiC™ 产品类别:找到最适合您的产品
我们不断地在现有的 Si 类产品基础上增加基于 SiC 的产品,包括采用沟槽技术的革命性的 CoolSiC™ MOSFET。 如今,该公司提供业内最全面的电力产品组合之一(从超低压到高压电力设备均有)。 除了确保提供最适合的解决方案之外,我们还进一步优化了基于 SiC 的产品,以满足特定的应用要求。 鉴于利用隔离式栅极输出部分可以更轻松地处理超快开关功率晶体管(如 CoolSiC™ MOSFET),我们为客户提供了基于我们的无芯变压器技术的完美匹配型电气隔离 EiceDRIVER™ 栅极驱动器 IC。我们这些年来,生产了数百万个混合模块(快速硅基开关与 CoolSiC™ 肖特基二极管的组合),积累了大量的专业知识和能力,并进一步为我们的技术领先地位做出了贡献。
CoolSiC™ MOSFETs - MODULES
| Part number | Specification | Package | Applications |
|---|---|---|---|
![]() FS55MR12W1M1H_B11 | Sixpack 1200 V CoolSiC™ MOSFET Easy Module | AG-EASY1B |
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![]() FS33MR12W1M1H_B11 | CoolSiC™ MOSFET sixpack module 1200 V | AG-EASY1B |
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![]() F3L11MR12W2M1HP_B19 | CoolSiC™ MOSFET 3-level module 1200 V | AG-EASY2B |
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![]() FF2MR12W3M1H_B11 | Half-bridge 1200 V CoolSiC™ MOSFET Easy Module | AG-EASY3B |
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![]() F4-11MR12W2M1HP_B76 | CoolSiC™ MOSFET fourpack module 1200 V | AG-EASY2B |
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![]() FF1MR12KM1H | CoolSiC™ MOSFET half bridge module 1200 V | AG-62MMHB |
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![]() FF2MR12KM1H | CoolSiC™ MOSFET half bridge module 1200 V | AG-62MMHB | |
![]() FF6MR12KM1H | Half-bridge 1200 V CoolSiC™ MOSFET Module | AG-62MMHB | |
![]() FF3MR20KM1H | CoolSiC™ MOSFET half bridge module 2000 V | AG-62MMHB |
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![]() FF4MR20KM1H | CoolSiC™ MOSFET half bridge module 2000 V | AG-62MMHB |
CoolSiC™ MOSFETs – DISCRETES
| Part number | Specification | Package | Applications |
|---|---|---|---|
![]() IMT65R022M1H | CoolSiC™ 650 V, 27 mΩ SiC-based trench MOSFET | PG-HSOF-8 |
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![]() IMT65R030M1H | CoolSiC™ MOSFET discrete 650 V in TOLL package | PG-HSOF-8 | |
![]() IMT65R057M1H | CoolSiC™ MOSFET discrete 650 V in TOLL package | PG-HSOF-8 | |
![]() AIMBG75R016M1HXTMA1 | The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. | PG-TO263-7 |
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![]() AIMDQ75R016M1HXUMA1 | The CoolSiC™ MOSFET 750 V is a highly robust SiC MOSFET for the best system performance and reliability. | PG-HDSOP-22 | |
![]() IMZ120R060M1H | CoolSiC™ 1200V SiC Trench MOSFET in TO247-4 package | PG-TO247-4 |
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![]() IMBG120R053M2H | CoolSiC™ MOSFET 1200 V G2 in TO-263-7 package | PG-TO-263-7 |
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![]() IMYH200R024M1H | CoolSiC™ 2000 V SiC Trench MOSFET | PG-TO-247PLUS-4-HCC |
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![]() IMW120R030M1H | CoolSiC™ 1200V SiC Trench MOSFET | PG-TO247-3 |
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![]() IMBF170R1K0M1 | CoolSiC™ 1700 V SiC Trench MOSFET | PG-TO-263-7 |
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EiceDRIVER™ SiC MOSFET Gate Driver ICs
| Part number | Specification | Package | Applications |
|---|---|---|---|
![]() 1ED3321MC12N | 2300 V single-channel isolated gate driver with short-circuit protection, active Miller clamp and soft-off, UL 1577 & VDE 0884-11 certified | PG-DSO-16 |
|
![]() 1ED3142MU12F | 6.5 A, 3 kV (rms) single-channel isolated gate driver with separate output, UL 1577 certified, 13.6 V UVLO | PG-DSO-8 |
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![]() 1ED3125MU12F | 10 A, 3.0 kV (rms) single-channel isolated gate driver with active Miller clamp, UL 1577 certified, 10.5 V UVLO | PG-DSO-8 | |
![]() 2EDS9265H | Fast, robust, dual-channel, reinforced isolated MOSFET gate driver with accurate and stable timing | PG-DSO-16 |
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![]() 2EDF9275F | Fast, robust, dual-channel, functional isolated MOSFET gate driver with accurate and stable timing | PG-DSO-16 |
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CoolSiC™ MOSFET – DISCRETE
| Part number | Specification | Package | Applications |
|---|---|---|---|
![]() AIKBE50N65RF5ATMA1 | Automotive Silicon-carbide (SiC) Hybrid Discrete 650 V in D2PAK-7L | PG-TO263-7 |
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![]() AIMBG120R040M1XTMA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in D2PAK-7L, 40mΩ | PG-TO263-7 |
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![]() AIMBG120R080M1XTMA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in D2PAK-7L, 80mΩ | PG-TO263-7 |
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![]() AIMZH120R010M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 8.7mΩ | PG-TO247-4 |
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![]() AIMZH120R020M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 20mΩ | PG-TO247-4 | |
![]() AIMZH120R030M1TXKSA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in TO247-4L (thin leads), 30mΩ | PG-TO247-4 | |
![]() AIMZH120R040M1TXKSA1 | Automotive 1200V Silicon-carbid (SiC) Trench Power MOSFET in TO247-4L (thin leads), 40mΩ | PG-TO247-4 |
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![]() AIMZH120R060M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 60mΩ | PG-TO247-4 | |
![]() AIMZH120R080M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 80mΩ | PG-TO247-4 | |
![]() AIMZH120R120M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 120mΩ | PG-TO247-4 |
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![]() AIMZH120R160M1TXKSA1 | Automotive 1200V Silicon-carbide (SiC) Trench Power MOSFET in TO247-4L (thin leads), 160mΩ | PG-TO247-4 |
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![]() FS05MR12A6MA1BBPSA1 | This HybridPACK™ Drive is a very compact six-pack module (1200V/200A) optimized for hybrid and electric vehicles. | AG-HDG1-3211 |
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![]() FS03MR12A6MA1BBPSA1 | This HybridPACK™ Drive is a very compact six-pack module (1200V/400A) optimized for hybrid and electric vehicles. | AG-HDG1-3211 |
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![]() FF08MR12W1MA1B11ABPSA1 | EasyPACK™ CoolSiC™ Automotive MOSFET 1200V Half Bridge Module | AG-EASY1BA-3211 |
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| Part number | Description | Target applications | Key features and benefits |
|---|---|---|---|
![]() Mother board: EVAL_PS_SIC_DP_MAIN | EVAL_PS_SIC_DP_MAIN CoolSiC™ MOSFET 1200 V in TO-247 3-/4-pin evaluation platform (mother board) User Guide | Solutions for solar energy systems, EV charging, UPS, power supplies, motor control and drives | Features:
Benefits:
|
![]() Daughter board: REF_PS_SIC_DP1 | REF_PS_SIC_DP1 Miller clamp function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card) | ||
![]() Daughter board: REF_PS_SIC_DP2 | REF_PS_SIC_DP2 Bipolar supply function board for EVAL_PS_SIC_DP_MAIN (daughter board / drive card) | ||
![]() EVAL-COOLSIC-2KVHCC | Evaluation Board as adaptable double pulse tester for 2000 V discrete CoolSiC™ MOSFETs in TO-247-4-PLUS-HCC package with compact single channel isolated gate driver EiceDRIVER™ 1ED3124MU12H1200 | Industrial | Features:
Benefits:
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![]() EVAL_3K3W_TP_PFC_SIC | 3300 W CCM bidirectional totem-pole PFC unit using CoolSiC™ 650 V, 600 V CoolMOS™ C7, and digital control via XMC™ microcontroller | High-end server, datacenter, telecom | Features:
Benefits:
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Infineon 的 Podcast4Engineers

SiC:与 Eva 一起了解碳化硅
碳化硅 (SiC) 不再只是下一代功率半导体创新,它已经到来你我身边。 听 Eva 介绍 SiC 如何让电动汽车充电和光伏等各种应用发生巨变,以及设计工程师在改为使用 SiC 时应考虑哪些事项。

SiC:与 Christian 一起探索碳化硅器件技术
有了碳化硅,谁还需要金刚石? 在我们的最新一期节目中,Christian 介绍了 SiC 和金刚石的共同点,以及新的器件技术如何进一步推动 SiC 设计

SiC:和 Edward 和 Giuseppe 一起探讨碳化硅分立式封装
不凡的事物总是小巧精致,碳化硅尤其如此! 在本期节目中,我们的专家 Edward 和 Giuseppe 畅谈了 SiC 的各种分立式封装,以及我们在未来可以有哪些期待。

SiC:听 Ainhoa 介绍碳化硅模块封装
能力越大,责任越大,也可能只是伟大的设计! 聆听我们的专家 Ainhoa 讲述功率模块中 SiC 多年来的演变历程,以及在为您的电力电子产品设计选择模块时,需要考虑哪些重要因素。

















































