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Quantity | Price (inc GST) |
---|---|
1+ | CNY50.760 (CNY57.3588) |
10+ | CNY45.100 (CNY50.963) |
25+ | CNY44.770 (CNY50.5901) |
50+ | CNY44.440 (CNY50.2172) |
100+ | CNY43.330 (CNY48.9629) |
250+ | CNY39.010 (CNY44.0813) |
500+ | CNY38.360 (CNY43.3468) |
Product Information
Product Overview
AS7C4096A-12JIN is a 5.0V 4Mb (512K × 8) CMOS fast SRAM. It is a high-performance CMOS 4,194,304-bit static random access memory (SRAM) device organized as 524,288 words × 8bits. It is designed for memory applications where fast data access, low power, and simple interfacing are desired. The chip enable input active-low CE permits easy memory expansion with multiple-bank memory systems. When active-low CE is high the device enters standby mode. The device is guaranteed not to exceed 55mW power consumption in CMOS standby mode. All chip inputs and outputs are TTL-compatible, and operation is from a single 5.0V supply voltage.
- Center power and ground pins
- Low power consumption: 880mW/max at 10ns (active), 55mW/max CMOS (standby)
- Equal access and cycle times
- Easy memory expansion with active-low CE, active-low OE inputs
- TTL-compatible, three-state I/O
- JEDEC standard packages
- ESD protection is ≥ 2000volts
- Latch-up current is ≥ 200mA
- 12ns access time, SOJ package
- Industrial temperature range from -40°C to 85°C
Technical Specifications
Asynchronous
512K x 8bit
36Pins
5.5V
-
-40°C
-
4Mbit
SOJ
4.5V
5V
Surface Mount
85°C
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Taiwan
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate