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Quantity | Price (inc GST) |
---|---|
1+ | CNY2,752.640 (CNY3,110.4832) |
10+ | CNY2,590.560 (CNY2,927.3328) |
Product Information
Product Overview
ADPA7008 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). It is ideal for linear applications such as electronic countermeasure and instrumentation applications requiring 31dBm of efficient PSAT. It requires 1500mA from a 5V supply voltage (VDD). The RF input and outputs are internally matched and dc blocked for ease of integration into higher level assemblies. It is widely used in application such as aerospace and defence, test instrumentation, communications etc.
- Saturated output power is 30dBm typical at (TA = 25°C, 20GHz to 22GHz)
- Gain is 17dB typical at (TA = 25°C, 20GHz to 22GHz)
- Output return loss is 12dB typical at (TA = 25°C, 20GHz to 22GHz)
- Input return loss is 14dB typical at (TA = 25°C, 20GHz to 22GHz)
- 50 ohm matched input and output
- Integrated power detector
- Operating temperature is -40°C to +85°C
- Package style is 18-terminal ceramic leadless chip carrier with heat sink [LCC-HS]
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
20GHz
17.5dB
LCC-EP
4V
-40°C
-
MSL 3 - 168 hours
54GHz
8dB
18Pins
5V
85°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate