ADPA7009-2ACEZ

ADPA7009-2ACEZ is a power amplifier. It has gallium arsenide (GaAs), pseudomorphic high-electron-mobility transistor (pHEMT), monolithic microwave integrated circuit (MMIC). This 0.5W power amplifier with an integrated temperature-compensated, on-chip power detector that operates between 20GHz and 54GHz. The RF input and outputs are internally matched and DC-blocked for ease of integration into higher-level assemblies. Most of the typically required external passive components for operation are integrated, which facilitates a small, compact printed circuit board (PCB) footprint. Application includes military and space and test instrumentation.

• 24-terminal chip array small outline no lead cavity [LGA-CAV] package
• Temperature range from -40°C to +85°C
• Gain is 17.5dB typical at 20GHz to 35GHz, input return loss is 14dB typical at 20GHz to 35GHz
• Output return loss is 15dB typical at 20GHz to 35GHz, OP1dB is 28dBm typical at 20GHz to 35GHz
• PSAT is 28.5dBm typical at 20GHz to 35GHz, OIP3 is 34.5dBm typical at 20GHz to 35GHz
• Noise figure is 7.5dB typical at 20GHz to 35GHz
• 5V supply voltage at 850mA
• 50 ohm matched input and output
• Integrated power-supply capacitors and bias inductors
• Integrated AC coupling capacitors

Notes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party