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Quantity | Price (inc GST) |
---|---|
1+ | CNY81.460 (CNY92.0498) |
10+ | CNY55.680 (CNY62.9184) |
25+ | CNY48.960 (CNY55.3248) |
100+ | CNY41.370 (CNY46.7481) |
300+ | CNY40.530 (CNY45.7989) |
500+ | CNY39.690 (CNY44.8497) |
1000+ | CNY38.840 (CNY43.8892) |
Product Information
Product Overview
LT®1122 JFET input operational amplifier combines high speed and precision performance. A unique poly-gate JFET process minimizes gate series resistance and gate-to-drain capacitance, facilitating wide bandwidth performance, without degrading JFET transistor matching. Typical applications include fast 12bit D/A output amplifiers, high speed buffers, fast sample-and-hold amplifiers, high speed integrators, voltage to frequency converters, active filters, log amplifiers and peak detectors.
- 100% tested settling time 350ns typ to 1mV at sum node
- 900µV max input offset voltage, 50pA max input offset current, 100pA max input bias current
- 75V/µs typ slew rate at TA = 25°C. VS = ±15V, AV = -1
- 13MHz gain-bandwidth at TA = 25°C, VS = ±15V, VOUT = 20VP-P
- 98dB typ CMRR, 101dB typ PSRR at TA = 25°C. VS = ±15V, VCM = ±10V
- 3.3µVP-P input noise voltage at 0.1Hz to 10Hz, TA = 25°C. VS = ±15V
- 27nV/√Hz typ input noise voltage density at TA = 25°C, VS = ±15V, fO =100Hz
- ±5V minimum supply voltage, 7.8mA typ supply current
- 8 lead SOIC package
- Operating temperature range from -40 to 85°C
Notes
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
Technical Specifications
1Channels
75V/µs
SOIC
JFET
130µV
Surface Mount
85°C
-
No SVHC (21-Jan-2025)
-
1 Amplifier
13MHz
± 10V to ± 18V
8Pins
-
12pA
-40°C
-
MSL 1 - Unlimited
SOIC
13MHz
75V/µs
Technical Docs (2)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Philippines
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate