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8.1A Dual MOSFETs:
2 Products FoundView
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Engineer
Manufacturer
Transistor Polarity
Channel Type
Drain Source Voltage Vds N Channel
Drain Source Voltage Vds
Drain Source Voltage Vds P Channel
Continuous Drain Current Id
On Resistance Rds(on)
Continuous Drain Current Id N Channel
Continuous Drain Current Id P Channel
Drain Source On State Resistance N Channel
Transistor Mounting
Drain Source On State Resistance P Channel
Rds(on) Test Voltage
Transistor Case Style
Gate Source Threshold Voltage Max
No. of Pins
Power Dissipation Pd
Power Dissipation N Channel
Power Dissipation P Channel
Operating Temperature Max
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| Compare | Price For | Quantity | ||||||||||||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Each (Supplied on Cut Tape) Re-Reel Packaging Options | 50+ CNY2.640 (CNY2.9832)250+ CNY2.480 (CNY2.8024)1000+ CNY2.340 (CNY2.6442)2000+ CNY2.190 (CNY2.4747) | Min: 100 / Mult: 1 | N Channel | N Channel | 30V | 30V | 30V | 8.1A | 0.014ohm | 8.1A | 8.1A | 0.014ohm | Surface Mount | 0.014ohm | 4.5V | SOIC | 1.1V | 8Pins | 2W | 2W | 2W | 150°C | HEXFET Series | |||||
Each (Supplied on Cut Tape) Re-Reel Packaging Options | 100+ CNY2.310 (CNY2.6103)500+ CNY1.790 (CNY2.0227)1000+ CNY1.420 (CNY1.6046)5000+ CNY1.290 (CNY1.4577) | Min: 100 / Mult: 5 | Complementary N and P Channel | Complementary N and P Channel | 30V | 30V | 30V | 8.1A | 0.023ohm | 8.1A | 8.1A | 0.023ohm | Surface Mount | 0.023ohm | 10V | SOIC | 1.45V | 8Pins | 2.5W | 2.5W | 2.5W | 150°C | - | |||||
