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DMC3032LSD-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 8.1 A, 8.1 A, 0.032 ohm
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2,690 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.320 (CNY2.6216) |
| 500+ | CNY1.800 (CNY2.034) |
| 1000+ | CNY1.390 (CNY1.5707) |
| 5000+ | CNY1.280 (CNY1.4464) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY232.00 (CNY262.16 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC3032LSD-13
Order Code3944046RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Continuous Drain Current Id8.1A
Drain Source Voltage Vds P Channel30V
On Resistance Rds(on)0.023ohm
Continuous Drain Current Id N Channel8.1A
Continuous Drain Current Id P Channel8.1A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.032ohm
Drain Source On State Resistance P Channel0.039ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.45V
Power Dissipation Pd2.5W
No. of Pins8Pins
Power Dissipation N Channel2.5W
Power Dissipation P Channel2.5W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
8.1A
On Resistance Rds(on)
0.023ohm
Continuous Drain Current Id P Channel
8.1A
Drain Source On State Resistance N Channel
0.032ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.45V
No. of Pins
8Pins
Power Dissipation P Channel
2.5W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
8.1A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.039ohm
Transistor Case Style
SOIC
Power Dissipation Pd
2.5W
Power Dissipation N Channel
2.5W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001