120A Silicon Carbide (SiC) MOSFETs & Modules | element14 China

Find a huge range of 120A Silicon Carbide (SiC) MOSFETs & Modules at element14 China. We stock a wide range of Silicon Carbide (SiC) MOSFETs & Modules, such as 30A, 17A, 31A & 40A Silicon Carbide (SiC) MOSFETs & Modules from the worlds top manufacturers including: Onsemi, Diotec & Rohm

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120A

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	UF3SC120009K4S	4014251 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 8600 µohm TO-247		Each	1+ CNY854.520 (CNY965.6076) 5+ CNY747.710 (CNY844.9123) 10+ CNY619.530 (CNY700.0689) 50+ CNY555.440 (CNY627.6472)	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	8600µohm	TO-247	4Pins	12V	4.7V	789W	175°C
	UJ4SC075006K4S	4221971 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 750 V 5.9 mohm TO-247		Each	1+ CNY693.470 (CNY783.6211) 5+ CNY606.780 (CNY685.6614) 10+ CNY502.760 (CNY568.1188) 50+ CNY450.750 (CNY509.3475)	Min: 1 / Mult: 1	Single	N Channel	120A	750V	5.9mohm	TO-247	4Pins	12V	6V	714W	175°C
	UF3SC065007K4S	4014249 Data Sheet RoHS	ONSEMI Silicon Carbide MOSFET Single N Channel 120 A 650 V 6700 µohm TO-247		Each	1+ CNY546.280 (CNY617.2964) 5+ CNY545.690 (CNY616.6297) 10+ CNY545.110 (CNY615.9743) 50+ CNY544.520 (CNY615.3076)	Min: 1 / Mult: 1	Single	N Channel	120A	650V	6700µohm	TO-247	4Pins	12V	4.7V	789W	175°C
	DIW120SIC022-AQ	4552614 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247		Each	1+ CNY1,601.420 (CNY1,809.6046) 5+ CNY1,426.720 (CNY1,612.1936) 10+ CNY1,252.010 (CNY1,414.7713) 50+ CNY1,226.980 (CNY1,386.4874)	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	3Pins	18V	4V	340W	175°C
	DIF120SIC022	4552616 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247		Each	1+ CNY564.270 (CNY637.6251) 5+ CNY502.700 (CNY568.051) 10+ CNY441.130 (CNY498.4769) 50+ CNY352.860 (CNY398.7318) 100+ CNY264.580 (CNY298.9754)	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C
	DIF120SIC022-AQ	4552613 Data Sheet RoHS	DIOTEC Silicon Carbide MOSFET Single N Channel 120 A 1.2 kV 0.0223 ohm TO-247		Each	1+ CNY1,601.420 (CNY1,809.6046) 5+ CNY1,426.720 (CNY1,612.1936) 10+ CNY1,252.010 (CNY1,414.7713) 50+ CNY1,226.980 (CNY1,386.4874)	Min: 1 / Mult: 1	Single	N Channel	120A	1.2kV	0.0223ohm	TO-247	4Pins	18V	4V	340W	175°C
	BSM120D12P2C005	2345472 Data Sheet RoHS	ROHM Silicon Carbide Bipolar (BJT) Single Transistor N Channel 120 A 1.2 kV 2.7 V		Each	1+ CNY2,746.070 (CNY3,103.0591) 5+ CNY2,741.910 (CNY3,098.3583)	Min: 1 / Mult: 1	Half Bridge	N Channel	120A	1.2kV	-	Module	10Pins	-	2.7V	780W	150°C

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