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Quantity | Price (inc GST) |
---|---|
1+ | CNY13.110 (CNY14.8143) |
10+ | CNY12.920 (CNY14.5996) |
50+ | CNY12.810 (CNY14.4753) |
Product Information
Product Overview
The FM25C160B-G is a 16kbit Non-volatile Memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to a RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead and system level reliability problems caused by serial flash, EEPROM and other non-volatile memories. Unlike serial flash and EEPROM, this memory performs write operations at bus speed. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition the product offers substantial write endurance compared with other non-volatile memories.
- No write delays are incurred
- Very fast serial peripheral interface
- Direct hardware replacement for serial flash and EEPROM
- Sophisticated write protection scheme
- -40 to 85°C Industrial temperature range
Applications
Computers & Computer Peripherals
Technical Specifications
FRAM
2K x 8bit
-
8Pins
5.5V
85°C
MSL 3 - 168 hours
16Kbit
SPI
SOIC
4.5V
-40°C
-
No SVHC (21-Jan-2025)
Technical Docs (1)
Alternatives for FM25C160B-G
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Associated Products
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate