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BSS8402DW-7-F
Dual MOSFET, Complementary N and P Channel, 60 V, 50 V, 115 mA, 130 mA, 7.5 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.870 (CNY2.1131) |
| 500+ | CNY1.200 (CNY1.356) |
| 1500+ | CNY1.180 (CNY1.3334) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY187.00 (CNY211.31 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoBSS8402DW-7-F
Order Code1713834RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds60V
Drain Source Voltage Vds N Channel60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel50V
On Resistance Rds(on)13.5ohm
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel130mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel7.5ohm
Drain Source On State Resistance P Channel10ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max2.5V
Power Dissipation Pd200mW
No. of Pins6Pins
Power Dissipation N Channel200mW
Power Dissipation P Channel200mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Product Overview
BSS8402DW-7-F is a complementary pair enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and maintains superior switching performance, making it ideal for high efficiency power management applications. Typical applications include general purpose interfacing switch, power management functions, analogue switch.
- Low on-resistance, low gate threshold voltage
- Low input capacitance, fast switching speed
- Low input/output leakage, complementary pair
- Drain source voltage is 60V at TA = +25°C, P/N channel
- Continuous drain current is 115mA at TA = +25°C, P/N channel
- Drain source on state resistance is 13.5ohm at TA = +25°C, P/N channel
- Power dissipation is 200mW at TA = +25°C, P/N channel
- SOT363 case
- Operating and storage temperature range from -55 to +150°C
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
13.5ohm
Continuous Drain Current Id P Channel
130mA
Drain Source On State Resistance N Channel
7.5ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2.5V
No. of Pins
6Pins
Power Dissipation P Channel
200mW
Product Range
-
Automotive Qualification Standard
-
SVHC
No SVHC (27-Jun-2024)
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds N Channel
60V
Drain Source Voltage Vds P Channel
50V
Continuous Drain Current Id N Channel
115mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
10ohm
Transistor Case Style
SOT-363
Power Dissipation Pd
200mW
Power Dissipation N Channel
200mW
Operating Temperature Max
150°C
Qualification
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000006