Print Page
DMC3025LDV-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 15 A, 15 A, 0.015 ohm
Image is for illustrative purposes only. Please refer to product description.
416 In Stock
Need more?
416 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.730 (CNY3.0849) |
| 500+ | CNY2.310 (CNY2.6103) |
| 1000+ | CNY2.080 (CNY2.3504) |
| 5000+ | CNY1.890 (CNY2.1357) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY273.00 (CNY308.49 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC3025LDV-13
Order Code3944040RL
Technical Datasheet
Channel TypeComplementary N and P Channel
Transistor PolarityComplementary N and P Channel
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id15A
Continuous Drain Current Id N Channel15A
On Resistance Rds(on)0.015ohm
Continuous Drain Current Id P Channel15A
Drain Source On State Resistance N Channel0.015ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.015ohm
Gate Source Threshold Voltage Max2V
Transistor Case StylePowerDI3333
No. of Pins8Pins
Power Dissipation Pd1W
Power Dissipation N Channel1W
Power Dissipation P Channel1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Technical Specifications
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
15A
Continuous Drain Current Id P Channel
15A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.015ohm
Transistor Case Style
PowerDI3333
Power Dissipation Pd
1W
Power Dissipation P Channel
1W
Product Range
-
Automotive Qualification Standard
-
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Continuous Drain Current Id
15A
On Resistance Rds(on)
0.015ohm
Drain Source On State Resistance N Channel
0.015ohm
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
2V
No. of Pins
8Pins
Power Dissipation N Channel
1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:United States
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001