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DMC3028LSDXQ-13
Dual MOSFET, Complementary N and P Channel, 30 V, 30 V, 5.5 A, 5.5 A, 0.027 ohm
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY3.130 (CNY3.5369) |
| 500+ | CNY2.620 (CNY2.9606) |
| 1000+ | CNY1.920 (CNY2.1696) |
| 5000+ | CNY1.870 (CNY2.1131) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY313.00 (CNY353.69 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC3028LSDXQ-13
Order Code3944045RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id5.5A
Continuous Drain Current Id N Channel5.5A
On Resistance Rds(on)0.019ohm
Continuous Drain Current Id P Channel5.5A
Drain Source On State Resistance N Channel0.027ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.025ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.2W
No. of Pins8Pins
Power Dissipation N Channel1.2W
Power Dissipation P Channel1.2W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
Continuous Drain Current Id N Channel
5.5A
Continuous Drain Current Id P Channel
5.5A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.025ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.2W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
5.5A
On Resistance Rds(on)
0.019ohm
Drain Source On State Resistance N Channel
0.027ohm
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.2W
Power Dissipation N Channel
1.2W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001