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DMC4050SSDQ-13
Dual MOSFET, Complementary N and P Channel, 40 V, 40 V, 5.3 A, 5.3 A, 0.045 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMC4050SSDQ-13
Order Code3944061RL
Your Part Number
Technical Datasheet
1,683 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.380 (CNY4.9494) |
| 500+ | CNY3.450 (CNY3.8985) |
| 1000+ | CNY3.320 (CNY3.7516) |
| 5000+ | CNY3.180 (CNY3.5934) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY438.00 (CNY494.94 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMC4050SSDQ-13
Order Code3944061RL
Technical Datasheet
Transistor PolarityComplementary N and P Channel
Channel TypeComplementary N and P Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id5.3A
Continuous Drain Current Id N Channel5.3A
On Resistance Rds(on)0.02ohm
Continuous Drain Current Id P Channel5.3A
Drain Source On State Resistance N Channel0.045ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel0.045ohm
Rds(on) Test Voltage10V
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max1.3V
No. of Pins8Pins
Power Dissipation Pd1.8W
Power Dissipation N Channel1.8W
Power Dissipation P Channel1.8W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary N and P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
Continuous Drain Current Id N Channel
5.3A
Continuous Drain Current Id P Channel
5.3A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.3V
Power Dissipation Pd
1.8W
Power Dissipation P Channel
1.8W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Channel Type
Complementary N and P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
5.3A
On Resistance Rds(on)
0.02ohm
Drain Source On State Resistance N Channel
0.045ohm
Drain Source On State Resistance P Channel
0.045ohm
Transistor Case Style
SOIC
No. of Pins
8Pins
Power Dissipation N Channel
1.8W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001