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DMG3406L-7
Power MOSFET, N Channel, 30 V, 3.6 A, 0.05 ohm, SOT-23, Surface Mount
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ManufacturerDIODES INC.
Manufacturer Part NoDMG3406L-7
Order Code3577034RL
Product RangeDMG3406L
Technical Datasheet
2,925 In Stock
3,000 more incoming. You can reserve stock now
2925 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY0.823 (CNY0.930) |
| 500+ | CNY0.681 (CNY0.7695) |
| 1500+ | CNY0.668 (CNY0.7548) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY82.30 (CNY93.00 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMG3406L-7
Order Code3577034RL
Product RangeDMG3406L
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds30V
Continuous Drain Current Id3.6A
Drain Source On State Resistance0.05ohm
Transistor Case StyleSOT-23
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation770mW
No. of Pins3Pins
Operating Temperature Max150°C
Product RangeDMG3406L
Qualification-
MSL-
Product Overview
DMG3406L-7 is a N-channel enhancement mode MOSFET. This MOSFET has been designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include battery charging, power management functions, DC-DC converters, and portable power adapters.
- Low on-resistance, low input capacitance
- Fast switching speed, low input/output leakage
- Drain-source voltage is 30V at TA=+25°C
- Gate-source voltage is ±20V at TA=+25°C
- Continuous drain current is 3.6A at TA=+25°C, steady state, VGS=10V
- Pulsed drain current (pulse width ≤ 10µS, duty cycle ≤ 1%) is 30A at TA=+25°C
- Maximum body diode forward current is 1.4A at TA=+25°C
- Power dissipation is 0.77W
- SOT23 case
- Operating and storage temperature range from -55 to +150°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
3.6A
Transistor Case Style
SOT-23
Rds(on) Test Voltage
10V
Power Dissipation
770mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
30V
Drain Source On State Resistance
0.05ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
DMG3406L
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.004536