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DMHC10H170SFJ-13
Dual MOSFET, Complementary Dual N and Dual P Channel, 100 V, 100 V, 2.9 A, 2.9 A, 0.16 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMHC10H170SFJ-13
Order Code3944078RL
Your Part Number
Technical Datasheet
2,474 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.980 (CNY6.7574) |
| 500+ | CNY5.700 (CNY6.441) |
| 1000+ | CNY5.410 (CNY6.1133) |
| 5000+ | CNY5.120 (CNY5.7856) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY598.00 (CNY675.74 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMHC10H170SFJ-13
Order Code3944078RL
Technical Datasheet
Transistor PolarityComplementary Dual N and Dual P Channel
Channel TypeComplementary Dual N and Dual P Channel
Drain Source Voltage Vds100V
Drain Source Voltage Vds N Channel100V
Drain Source Voltage Vds P Channel100V
Continuous Drain Current Id2.9A
Continuous Drain Current Id N Channel2.9A
On Resistance Rds(on)0.111ohm
Continuous Drain Current Id P Channel2.9A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.16ohm
Drain Source On State Resistance P Channel0.25ohm
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Transistor Case StyleVDFN5045
No. of Pins12Pins
Power Dissipation Pd2.1W
Power Dissipation N Channel2.1W
Power Dissipation P Channel2.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
Complementary Dual N and Dual P Channel
Drain Source Voltage Vds
100V
Drain Source Voltage Vds P Channel
100V
Continuous Drain Current Id N Channel
2.9A
Continuous Drain Current Id P Channel
2.9A
Drain Source On State Resistance N Channel
0.16ohm
Rds(on) Test Voltage
10V
Transistor Case Style
VDFN5045
Power Dissipation Pd
2.1W
Power Dissipation P Channel
2.1W
Product Range
-
Automotive Qualification Standard
-
Channel Type
Complementary Dual N and Dual P Channel
Drain Source Voltage Vds N Channel
100V
Continuous Drain Current Id
2.9A
On Resistance Rds(on)
0.111ohm
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.25ohm
Gate Source Threshold Voltage Max
2V
No. of Pins
12Pins
Power Dissipation N Channel
2.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001