Print Page
DMHC4035LSDQ-13
Dual MOSFET, Complementary Dual N and Dual P Channel, 40 V, 40 V, 4.5 A, 4.5 A, 0.026 ohm
Image is for illustrative purposes only. Please refer to product description.
2,500 In Stock
Need more?
2500 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY4.960 (CNY5.6048) |
| 500+ | CNY3.920 (CNY4.4296) |
| 1000+ | CNY3.760 (CNY4.2488) |
| 5000+ | CNY3.600 (CNY4.068) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY496.00 (CNY560.48 inc GST)
Enter Your Part No/Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
This number will be added to the Order Confirmation, Invoice, Dispatch note, Web confirmation Email and Product Label.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMHC4035LSDQ-13
Order Code3944081RL
Technical Datasheet
Transistor PolarityComplementary Dual N and Dual P Channel
Channel TypeComplementary Dual N and Dual P Channel
Drain Source Voltage Vds40V
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id4.5A
On Resistance Rds(on)0.026ohm
Continuous Drain Current Id N Channel4.5A
Continuous Drain Current Id P Channel4.5A
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel0.026ohm
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.026ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.5W
No. of Pins8Pins
Power Dissipation N Channel1.5W
Power Dissipation P Channel1.5W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (27-Jun-2024)
Product Overview
DMHC4035LSDQ-13 is a 40V complementary enhancement mode MOSFET H-bridge features 2 N and 2 P channels in an SO-8 package. Qualified to AEC-Q101 the H bridge is ideally suited to driving solenoids, DC motors and audio outputs.
- Drain-source voltage is 40V, gate-source voltage is ±20V
- Pulsed drain current is 25A
- Low on-resistance
- Low input capacitance
- Fast switching speed
- Qualified to AEC-Q101 standards for high reliability
- PPAP capable
- Total power dissipation is 5W
Technical Specifications
Transistor Polarity
Complementary Dual N and Dual P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.026ohm
Continuous Drain Current Id P Channel
4.5A
Drain Source On State Resistance N Channel
0.026ohm
Drain Source On State Resistance P Channel
0.026ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.5W
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (27-Jun-2024)
Channel Type
Complementary Dual N and Dual P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
4.5A
Continuous Drain Current Id N Channel
4.5A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.5W
Power Dissipation N Channel
1.5W
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001