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DMN2053UVT-7
Dual MOSFET, N Channel, 20 V, 20 V, 4.6 A, 4.6 A, 0.035 ohm
Image is for illustrative purposes only. Please refer to product description.
4,837 In Stock
3,000 more incoming. You can reserve stock now
4837 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY1.210 (CNY1.3673) |
| 500+ | CNY1.160 (CNY1.3108) |
| 1000+ | CNY0.833 (CNY0.9413) |
| 5000+ | CNY0.677 (CNY0.765) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY121.00 (CNY136.73 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN2053UVT-7
Order Code3944097RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Continuous Drain Current Id4.6A
Drain Source Voltage Vds P Channel20V
On Resistance Rds(on)0.035ohm
Continuous Drain Current Id N Channel4.6A
Continuous Drain Current Id P Channel4.6A
Drain Source On State Resistance N Channel0.035ohm
Transistor MountingSurface Mount
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage4.5V
Transistor Case StyleTSOT-26
Gate Source Threshold Voltage Max1V
No. of Pins6Pins
Power Dissipation Pd1.1W
Power Dissipation N Channel1.1W
Power Dissipation P Channel1.1W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (27-Jun-2024)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
20V
Continuous Drain Current Id
4.6A
On Resistance Rds(on)
0.035ohm
Continuous Drain Current Id P Channel
4.6A
Transistor Mounting
Surface Mount
Rds(on) Test Voltage
4.5V
Gate Source Threshold Voltage Max
1V
Power Dissipation Pd
1.1W
Power Dissipation P Channel
1.1W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
20V
Drain Source Voltage Vds P Channel
20V
Continuous Drain Current Id N Channel
4.6A
Drain Source On State Resistance N Channel
0.035ohm
Drain Source On State Resistance P Channel
-
Transistor Case Style
TSOT-26
No. of Pins
6Pins
Power Dissipation N Channel
1.1W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001