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DMN66D0LDW-7
Dual MOSFET, N Channel, 60 V, 60 V, 115 mA, 115 mA, 5 ohm
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMN66D0LDW-7
Order Code3944134RL
Your Part Number
Technical Datasheet
2,890 In Stock
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2890 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY2.700 (CNY3.051) |
| 500+ | CNY2.080 (CNY2.3504) |
| 1000+ | CNY1.350 (CNY1.5255) |
| 5000+ | CNY1.300 (CNY1.469) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY270.00 (CNY305.10 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMN66D0LDW-7
Order Code3944134RL
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds N Channel60V
Drain Source Voltage Vds60V
Continuous Drain Current Id115mA
Drain Source Voltage Vds P Channel60V
On Resistance Rds(on)3.5ohm
Continuous Drain Current Id N Channel115mA
Continuous Drain Current Id P Channel115mA
Transistor MountingSurface Mount
Drain Source On State Resistance N Channel5ohm
Drain Source On State Resistance P Channel-
Rds(on) Test Voltage5V
Gate Source Threshold Voltage Max2V
Transistor Case StyleSOT-363
Power Dissipation Pd250mW
No. of Pins6Pins
Power Dissipation N Channel250mW
Power Dissipation P Channel250mW
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds N Channel
60V
Continuous Drain Current Id
115mA
On Resistance Rds(on)
3.5ohm
Continuous Drain Current Id P Channel
115mA
Drain Source On State Resistance N Channel
5ohm
Rds(on) Test Voltage
5V
Transistor Case Style
SOT-363
No. of Pins
6Pins
Power Dissipation P Channel
250mW
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds
60V
Drain Source Voltage Vds P Channel
60V
Continuous Drain Current Id N Channel
115mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
-
Gate Source Threshold Voltage Max
2V
Power Dissipation Pd
250mW
Power Dissipation N Channel
250mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (25-Jun-2025)
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001