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DMP4050SSDQ-13
Dual MOSFET, P Channel, 40 V, 40 V, 4 A, 4 A
Image is for illustrative purposes only. Please refer to product description.
ManufacturerDIODES INC.
Manufacturer Part NoDMP4050SSDQ-13
Order Code3944154RL
Your Part Number
Technical Datasheet
2,339 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY6.570 (CNY7.4241) |
| 500+ | CNY5.200 (CNY5.876) |
| 1000+ | CNY4.200 (CNY4.746) |
| 5000+ | CNY4.100 (CNY4.633) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY657.00 (CNY742.41 inc GST)
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Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerDIODES INC.
Manufacturer Part NoDMP4050SSDQ-13
Order Code3944154RL
Technical Datasheet
Channel TypeP Channel
Transistor PolarityP Channel
Drain Source Voltage Vds N Channel40V
Drain Source Voltage Vds40V
Continuous Drain Current Id4A
Drain Source Voltage Vds P Channel40V
Continuous Drain Current Id N Channel4A
On Resistance Rds(on)0.038ohm
Continuous Drain Current Id P Channel4A
Drain Source On State Resistance N Channel-
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Drain Source On State Resistance P Channel0.05ohm
Transistor Case StyleSOIC
Gate Source Threshold Voltage Max3V
Power Dissipation Pd1.25W
No. of Pins8Pins
Power Dissipation N Channel1.25W
Power Dissipation P Channel1.25W
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
SVHCNo SVHC (25-Jun-2025)
Technical Specifications
Channel Type
P Channel
Drain Source Voltage Vds N Channel
40V
Continuous Drain Current Id
4A
Continuous Drain Current Id N Channel
4A
Continuous Drain Current Id P Channel
4A
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.05ohm
Gate Source Threshold Voltage Max
3V
No. of Pins
8Pins
Power Dissipation P Channel
1.25W
Product Range
-
Automotive Qualification Standard
AEC-Q101
Transistor Polarity
P Channel
Drain Source Voltage Vds
40V
Drain Source Voltage Vds P Channel
40V
On Resistance Rds(on)
0.038ohm
Drain Source On State Resistance N Channel
-
Rds(on) Test Voltage
10V
Transistor Case Style
SOIC
Power Dissipation Pd
1.25W
Power Dissipation N Channel
1.25W
Operating Temperature Max
150°C
Qualification
AEC-Q101
SVHC
No SVHC (25-Jun-2025)
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85411000
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (25-Jun-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000001