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Quantity | Price (inc GST) |
---|---|
1+ | CNY8.370 (CNY9.4581) |
10+ | CNY5.670 (CNY6.4071) |
100+ | CNY4.160 (CNY4.7008) |
500+ | CNY3.390 (CNY3.8307) |
1000+ | CNY3.110 (CNY3.5143) |
5000+ | CNY2.830 (CNY3.1979) |
Price for:Each
Minimum: 1
Multiple: 1
CNY8.37 (CNY9.46 inc GST)
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Product Information
ManufacturerDIODES INC.
Manufacturer Part NoZVP2110A
Order Code9525955
Technical Datasheet
Channel TypeP Channel
Drain Source Voltage Vds100V
Continuous Drain Current Id230mA
Drain Source On State Resistance8ohm
Transistor Case StyleTO-226AA
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3.5V
Power Dissipation700mW
No. of Pins3Pins
Operating Temperature Max150°C
Product Range-
Qualification-
Product Overview
The ZVP2110A is a -100V E-Line P-channel Enhancement Mode Vertical DMOS FET with 8Ω resistance and 700mW power dissipation.
Applications
Power Management, Motor Drive & Control, Audio, Automotive
Technical Specifications
Channel Type
P Channel
Continuous Drain Current Id
230mA
Transistor Case Style
TO-226AA
Rds(on) Test Voltage
10V
Power Dissipation
700mW
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Drain Source Voltage Vds
100V
Drain Source On State Resistance
8ohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
3.5V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000161