Print Page
BD14010STU
Bipolar (BJT) Single Transistor, PNP, 80 V, 1.5 A, 12.5 W, TO-225AA, Through Hole
Image is for illustrative purposes only. Please refer to product description.
No Longer Manufactured
Product Information
ManufacturerONSEMI
Manufacturer Part NoBD14010STU
Order Code2453824
Technical Datasheet
Transistor PolarityPNP
Collector Emitter Voltage Max80V
Continuous Collector Current1.5A
Power Dissipation12.5W
Transistor Case StyleTO-225AA
Transistor MountingThrough Hole
No. of Pins3Pins
Transition Frequency-
DC Current Gain hFE Min63hFE
Operating Temperature Max150°C
Product Range-
Qualification-
MSL-
Product Overview
The BD14010STU is a PNP Epitaxial Silicon Transistor suitable for medium power linear and switching applications. The bipolar transistor complement to BD139 NPN transistor.
- -55 to 150°C Operating temperature range
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
PNP
Continuous Collector Current
1.5A
Transistor Case Style
TO-225AA
No. of Pins
3Pins
DC Current Gain hFE Min
63hFE
Product Range
-
MSL
-
Collector Emitter Voltage Max
80V
Power Dissipation
12.5W
Transistor Mounting
Through Hole
Transition Frequency
-
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (27-Jun-2024)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Y-Ex
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (27-Jun-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.001769