NDP6060
Power MOSFET, N Channel, 60 V, 48 A, 0.025 ohm, TO-220AB, Through Hole
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY25.470 (CNY28.7811) |
| 10+ | CNY13.010 (CNY14.7013) |
| 100+ | CNY12.340 (CNY13.9442) |
| 500+ | CNY11.060 (CNY12.4978) |
| 1000+ | CNY11.000 (CNY12.430) |
Product Information
Product Overview
The NDP6060 is a N-channel enhancement-mode Power FET produced using high cell density DMOS technology. This very high density process has been especially tailored to minimize ON-state resistance, provide superior switching performance and withstand high energy pulses in the avalanche and commutation modes. It is particularly suited for low voltage applications such as DC-to-DC converters, PWM motor controls and other battery powered circuits where fast-switching, low in-line power loss and resistance to transients are needed. The rugged internal source-drain diode can eliminates the need for an external Zener diode transient suppressor.
- Critical DC electrical parameters specified at elevated temperature
- High density cell design for extremely low RDS (ON)
Technical Specifications
N Channel
48A
TO-220AB
10V
100W
175°C
-
Lead (27-Jun-2024)
60V
0.025ohm
Through Hole
2.9V
3Pins
-
-
Technical Docs (2)
Associated Products
3 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate