Product Information
Product Overview
The MB85RC64APNF-G-JNE1 is a 64kB I²C Ferroelectric Random Access Memory (FRAM) chip in a configuration of 8192 words x 8-bit, using the ferroelectric process and silicon gate CMOS process technologies for forming the nonvolatile memory cells. Unlike SRAM, the MB85RC64A is able to retain data without using a data backup battery. The read/write endurance of the nonvolatile memory cells used for the MB85RC64A has improved to be at least 10¹² cycles, significantly outperforming flash memory and E²PROM in the number. The MB85RC64A does not need a polling sequence after writing to the memory such as the case of Flash memory or E²PROM.
- Operating frequency - 1MHz maximum
- 2-wire serial interface
- Operating power supply voltage - 2.7 to 3.6V
- Low power consumption
- Data retention - 10 years
Applications
Computers & Computer Peripherals, Industrial
Technical Specifications
FRAM
8K x 8bit
-
8Pins
3.6V
85°C
MSL 3 - 168 hours
64Kbit
I2C
SOP
2.7V
-40°C
-
No SVHC (17-Dec-2014)
Technical Docs (3)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate