Print Page
Image is for illustrative purposes only. Please refer to product description.
ManufacturerINFINEON
Manufacturer Part NoAUIRF1404Z
Order Code1813387
Also Known AsSP001520218
Technical Datasheet
940 In Stock
Need more?
940 Delivery in 5-6 Business Days(UK stock)
Available until stock is exhausted
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY30.580 (CNY34.5554) |
Price for:Each
Minimum: 1
Multiple: 1
CNY30.58 (CNY34.56 inc GST)
Line Note
Added to your Order Confirmation, Invoice, and Dispatch note for this order only.
Product Information
ManufacturerINFINEON
Manufacturer Part NoAUIRF1404Z
Order Code1813387
Also Known AsSP001520218
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds40V
Continuous Drain Current Id160A
Drain Source On State Resistance3700µohm
Transistor Case StyleTO-220AB
Transistor MountingThrough Hole
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2V
Power Dissipation200W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
QualificationAEC-Q101
MSL-
SVHCNo SVHC (23-Jan-2024)
Alternatives for AUIRF1404Z
3 Products Found
Product Overview
The AUIRF1404Z is a HEXFET® single N-channel Power MOSFET utilizes the latest processing techniques to achieve extremely low ON-resistance per silicon area. Additional features of this design are a 175°C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device.
- Advanced process technology
- Ultra-low ON-resistance
- Repetitive avalanche allowed up to Tjmax
Applications
Motor Drive & Control, Automotive, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
160A
Transistor Case Style
TO-220AB
Rds(on) Test Voltage
10V
Power Dissipation
200W
Operating Temperature Max
175°C
Qualification
AEC-Q101
SVHC
No SVHC (23-Jan-2024)
Drain Source Voltage Vds
40V
Drain Source On State Resistance
3700µohm
Transistor Mounting
Through Hole
Gate Source Threshold Voltage Max
2V
No. of Pins
3Pins
Product Range
-
MSL
-
Technical Docs (2)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Mexico
Country in which last significant manufacturing process was carried out
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (23-Jan-2024)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002948