BSC011N03LSIATMA1
Power MOSFET, N Channel, 30 V, 100 A, 900 µohm, TDSON, Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY12.670 (CNY14.3171) |
| 10+ | CNY8.720 (CNY9.8536) |
| 100+ | CNY6.380 (CNY7.2094) |
| 500+ | CNY4.810 (CNY5.4353) |
| 1000+ | CNY4.220 (CNY4.7686) |
Product Information
Product Overview
The BSC011N03LSI is a N-channel Power MOSFET features ultra low gate and output charge. With the new OptiMOS™ 30V product family, Infineon sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solutions. It is tailored to the needs of power management in notebook by improved EMI behaviour, as well as increased battery life.
- Lowest ON-state resistance in small footprint packages
- Easy to design in
- Increased battery lifetime
- Improved EMI behaviour making external snubber networks obsolete
- Reducing power losses
- Optimized for high performance SMPS
- Integrated monolithic Schottky-like diode
- Very low ON-resistance RDS (ON) @ VGS = 4.5V
- 100% Avalanche tested
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Portable Devices, Computers & Computer Peripherals, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
100A
TDSON
10V
96W
150°C
-
No SVHC (21-Jan-2025)
30V
900µohm
Surface Mount
2V
8Pins
-
MSL 1 - Unlimited
Technical Docs (2)
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Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate