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BSC100N06LS3GATMA1
Power MOSFET, N Channel, 60 V, 50 A, 0.0078 ohm, SuperSOT, Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoBSC100N06LS3GATMA1
Order Code2212844
Also Known AsBSC100N06LS3 G, SP000453664
Technical Datasheet
79,605 In Stock
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718 Next business day delivery available(Shanghai stock)
1927 Delivery in 3-4 Business Days(Shanghai stock)
76960 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY9.480 (CNY10.7124) |
| 10+ | CNY6.600 (CNY7.458) |
| 100+ | CNY5.150 (CNY5.8195) |
| 500+ | CNY4.360 (CNY4.9268) |
| 1000+ | CNY3.340 (CNY3.7742) |
| 5000+ | CNY3.240 (CNY3.6612) |
Price for:Each
Minimum: 1
Multiple: 1
CNY9.48 (CNY10.71 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSC100N06LS3GATMA1
Order Code2212844
Also Known AsBSC100N06LS3 G, SP000453664
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds60V
Continuous Drain Current Id50A
Drain Source On State Resistance0.0078ohm
Transistor Case StyleSuperSOT
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max1.7V
Power Dissipation50W
No. of Pins8Pins
Operating Temperature Max150°C
Product Range-
Qualification-
MSLMSL 3 - 168 hours
SVHCNo SVHC (21-Jan-2025)
Product Overview
The BSC100N06LS3 G is a 60V N-channel Power MOSFET optimized for synchronous rectification in switched mode power supplies (SMPS) such as those found in servers, desktops and tablet charger. Dramatically reduced gate charge and output charge enable high system efficiency and power density. The OptiMOS™ power MOSFET is ideally suited for high frequency switching and DC-DC converters.
- Highest system efficiency
- Less paralleling required
- Increased power density
- Saving space
- Very low voltage overshoot
- Superior thermal resistance
Applications
Power Management, Alternative Energy, Motor Drive & Control, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
50A
Transistor Case Style
SuperSOT
Rds(on) Test Voltage
10V
Power Dissipation
50W
Operating Temperature Max
150°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
60V
Drain Source On State Resistance
0.0078ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
1.7V
No. of Pins
8Pins
Product Range
-
MSL
MSL 3 - 168 hours
Technical Docs (2)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0002