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BSD840NH6327XTSA1
Dual MOSFET, N Channel, 20 V, 20 V, 880 mA, 880 mA, 0.27 ohm
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ManufacturerINFINEON
Manufacturer Part NoBSD840NH6327XTSA1
Order Code2443479RL
Also Known AsBSD840N H6327, SP000917654
Technical Datasheet
75,725 In Stock
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY1.430 (CNY1.6159) |
| 250+ | CNY0.963 (CNY1.0882) |
| 1000+ | CNY0.633 (CNY0.7153) |
| 5000+ | CNY0.500 (CNY0.565) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 5
CNY143.00 (CNY161.59 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoBSD840NH6327XTSA1
Order Code2443479RL
Also Known AsBSD840N H6327, SP000917654
Technical Datasheet
Channel TypeN Channel
Transistor PolarityN Channel
Drain Source Voltage Vds N Channel20V
Drain Source Voltage Vds20V
Drain Source Voltage Vds P Channel20V
Continuous Drain Current Id880mA
On Resistance Rds(on)0.27ohm
Continuous Drain Current Id N Channel880mA
Continuous Drain Current Id P Channel880mA
Drain Source On State Resistance N Channel0.27ohm
Transistor MountingSurface Mount
Rds(on) Test Voltage2.5V
Drain Source On State Resistance P Channel0.27ohm
Transistor Case StyleSOT-363
Gate Source Threshold Voltage Max550mV
Power Dissipation Pd500mW
No. of Pins6Pins
Power Dissipation N Channel500mW
Power Dissipation P Channel500mW
Operating Temperature Max150°C
Product Range-
QualificationAEC-Q101
Automotive Qualification StandardAEC-Q101
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
Applications
Automotive
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Drain Source Voltage Vds N Channel
20V
Drain Source Voltage Vds P Channel
20V
On Resistance Rds(on)
0.27ohm
Continuous Drain Current Id P Channel
880mA
Transistor Mounting
Surface Mount
Drain Source On State Resistance P Channel
0.27ohm
Gate Source Threshold Voltage Max
550mV
No. of Pins
6Pins
Power Dissipation P Channel
500mW
Product Range
-
Automotive Qualification Standard
AEC-Q101
SVHC
No SVHC (21-Jan-2025)
Transistor Polarity
N Channel
Drain Source Voltage Vds
20V
Continuous Drain Current Id
880mA
Continuous Drain Current Id N Channel
880mA
Drain Source On State Resistance N Channel
0.27ohm
Rds(on) Test Voltage
2.5V
Transistor Case Style
SOT-363
Power Dissipation Pd
500mW
Power Dissipation N Channel
500mW
Operating Temperature Max
150°C
Qualification
AEC-Q101
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412100
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000005