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BSZ018NE2LSATMA1

Name: Power MOSFET, N Channel, 25 V, 153 A, 0.0018 ohm, TSDSON-FL, Surface Mount
Brand: INFINEON
SKU: 2480779RL
Availability: InStock

Power MOSFET, N Channel, 25 V, 153 A, 0.0018 ohm, TSDSON-FL, Surface Mount

Image is for illustrative purposes only. Please refer to product description.

ManufacturerINFINEON

Manufacturer Part NoBSZ018NE2LSATMA1

Order Code2480779RL

Also Known AsBSZ018NE2LS, SP000756338

Technical Datasheet

Data Sheet

See all Technical Docs

Packaging Options

Cut Tape

Re-Reel

12,073 In Stock

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Quantity	Price (inc GST)
100+	CNY6.250 (CNY7.0625)
500+	CNY5.160 (CNY5.8308)
1000+	CNY4.920 (CNY5.5596)
5000+	CNY4.670 (CNY5.2771)

Price for:Each (Supplied on Cut Tape)

Minimum: 100

Multiple: 1

CNY625.00 (CNY706.25 inc GST)

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Product Information

ManufacturerINFINEON

Manufacturer Part NoBSZ018NE2LSATMA1

Order Code2480779RL

Also Known AsBSZ018NE2LS, SP000756338

Technical Datasheet

Data Sheet

Channel TypeN Channel

Drain Source Voltage Vds25V

Continuous Drain Current Id153A

Drain Source On State Resistance0.0018ohm

Transistor Case StyleTSDSON-FL

Transistor MountingSurface Mount

Rds(on) Test Voltage10V

Gate Source Threshold Voltage Max2V

Power Dissipation69W

No. of Pins8Pins

Operating Temperature Max150°C

Product Range-

Qualification-

MSLMSL 1 - Unlimited

SVHCNo SVHC (21-Jan-2025)

Product Overview

The BSZ018NE2LS is a N-channel Power MOSFET with new OptiMOS™ 25V product family, sets new standards in power density and energy efficiency and system in package. Ultra low gate and output charge, together with lowest ON-state resistance in small footprint packages, make OptiMOS™ 25V the best choice for the demanding requirements of voltage regulator solution applications. Available in half bridge configuration. It minimizes EMI in the system making external snubber networks obsolete and the products easy to design-in.

Save space with smallest packages like CanPAK™

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Technical Specifications

Channel Type

N Channel

Continuous Drain Current Id

153A

Transistor Case Style

TSDSON-FL

Rds(on) Test Voltage

10V

Power Dissipation

69W

Operating Temperature Max

150°C

Qualification

SVHC

No SVHC (21-Jan-2025)

Drain Source Voltage Vds

25V

Drain Source On State Resistance

0.0018ohm

Transistor Mounting

Surface Mount

Gate Source Threshold Voltage Max

No. of Pins

8Pins

Product Range

MSL

MSL 1 - Unlimited

Technical Docs (3)

Technical Data Sheet EN

Simulation Model EN

Application Note EN

Alternatives for BSZ018NE2LSATMA1

3 Products Found

Legislation and Environmental

Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out

Tariff No:85412900

US ECCN:EAR99

EU ECCN:NLR

RoHS Compliant:Yes

RoHS

RoHS Phthalates Compliant:Yes

RoHS

SVHC:No SVHC (21-Jan-2025)

Download Product Compliance Certificate

Product Compliance Certificate

Weight (kg):.000122

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