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BSZ0909NDXTMA1
Dual MOSFET, N Channel, 30 V, 30 V, 20 A, 20 A, 0.0145 ohm
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ManufacturerINFINEON
Manufacturer Part NoBSZ0909NDXTMA1
Order Code2771840RL
Also Known AsBSZ0909ND, SP001637282
Technical Datasheet
Product Information
ManufacturerINFINEON
Manufacturer Part NoBSZ0909NDXTMA1
Order Code2771840RL
Also Known AsBSZ0909ND, SP001637282
Technical Datasheet
Transistor PolarityN Channel
Channel TypeN Channel
Drain Source Voltage Vds30V
Drain Source Voltage Vds N Channel30V
Drain Source Voltage Vds P Channel30V
Continuous Drain Current Id20A
On Resistance Rds(on)0.0145ohm
Continuous Drain Current Id N Channel20A
Continuous Drain Current Id P Channel20A
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Transistor Case StyleWISON
Gate Source Threshold Voltage Max1.6V
Power Dissipation Pd17W
No. of Pins8Pins
Power Dissipation N Channel17W
Power Dissipation P Channel17W
Operating Temperature Max150°C
Product Range-
Qualification-
Automotive Qualification Standard-
Product Overview
The BSZ0909NDXTMA1 from Infineon is a dual N-channel OptiMOS™ MOSFET in 8 pin WISON package. The OptiMOS™ technology combined with the PQFN 3x3 package offers an optimized solution for DC to DC applications with space critical requirements. The BSZ0909ND fits perfectly in wireless charging or drives (e.g. multicopter) architectures where designers target to simplify the layout and significantly save space without compromising on efficiency.
- Enhancement mode
- Logic level (4.5V rated)
- Avalanche rated
- Low switching losses
- High switching frequency operation
- Lowest parasitics
- Low gate drive losses
- Drain source voltage VDS is 30V, maximum RDS(on) is 18mohm, continuous drain current ID is 20A
- Operating temperature range from -55°C to 150°C
- Power dissipation is 17W at TC=25°C
Applications
Power Management, Industrial
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Transistor Polarity
N Channel
Drain Source Voltage Vds
30V
Drain Source Voltage Vds P Channel
30V
On Resistance Rds(on)
0.0145ohm
Continuous Drain Current Id P Channel
20A
Rds(on) Test Voltage
10V
Gate Source Threshold Voltage Max
1.6V
No. of Pins
8Pins
Power Dissipation P Channel
17W
Product Range
-
Automotive Qualification Standard
-
Channel Type
N Channel
Drain Source Voltage Vds N Channel
30V
Continuous Drain Current Id
20A
Continuous Drain Current Id N Channel
20A
Transistor Mounting
Surface Mount
Transistor Case Style
WISON
Power Dissipation Pd
17W
Power Dissipation N Channel
17W
Operating Temperature Max
150°C
Qualification
-
Technical Docs (1)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.0003