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Quantity | Price (inc GST) |
---|---|
1+ | CNY96.730 (CNY109.3049) |
10+ | CNY84.630 (CNY95.6319) |
25+ | CNY70.130 (CNY79.2469) |
50+ | CNY62.880 (CNY71.0544) |
100+ | CNY58.040 (CNY65.5852) |
250+ | CNY54.170 (CNY61.2121) |
Product Information
Product Overview
CY7C1041G30-10ZSXE is a high-performance CMOS fast static RAM automotive part with embedded ECC. This device has a single chip enable (active-low CE) input and is accessed by asserting it LOW. Data writes are performed by asserting the write enable (active-low WE) input LOW, while providing the data on I/O0 through I/O15 and the address on A0 through A17 pins. Data reads are performed by asserting the output enable (active-low OE) input and providing the required address on the address lines. All I/Os (I/O0 through I/O15) are placed in a HI-Z state when the device is deselected (active-low CE LOW), or when the control signals are deasserted (active-low OE, active-low BLE, active-low BHE).
- AEC-Q100 qualified
- High speed, tAA=10ns
- Embedded ECC for single-bit error correction
- Active current ICC=40mA typical
- Standby current ISB2=6mA typical
- Operating voltage range from 2.2V to 3.6V
- 1.0V data retention
- TTL- compatible inputs and outputs
- 44-pin TSOP II package
- Automotive-E temperature range from -40°C to +125°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Asynchronous SRAM
256Kword x 16bit
44Pins
3.6V
-
-40°C
-
No SVHC (21-Jan-2025)
4Mbit
TSOP-II
2.2V
-
Surface Mount
125°C
MSL 3 - 168 hours
Technical Docs (1)
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate