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Quantity | Price (inc GST) |
---|---|
1+ | CNY972.510 (CNY1,098.9363) |
5+ | CNY895.020 (CNY1,011.3726) |
Product Information
Product Overview
CoolGaN™ 600V e-mode HEMT half-bridge evaluation platform featuring GaN EiceDRIVER™. This evaluation board enables easy, rapid setup and test of CoolGaN™ transistors. The generic topology can be configured for boost or buck operation, pulse testing or continuous full-power operation. Test points provide easy access to connect signals to an oscilloscope to measure the switching performance of CoolGaN™ transistors and gate driver. This board saves the user from having to design their own gate driver and power circuit to evaluate gallium nitride transistors. It provides a platform to evaluate GaN in the universal half-bridge topology as a building block to nearly all converter and inverter applications.
- Simple GaN half-bridge with dedicated GaN driver Ics
- Capable of multi-MHz switching frequencies
- Zero reverse-recovery, can shift between hard or soft-switching
- GaN transistors feature topside cooling for high power dissipation
- Easy setup and use
- Multiple configurations possible
- Evaluate high-frequency capabilities of GaN
- Evaluate waveforms with low ringing, overshoot, EMI
- Enables easy evaluation at multi-kilowatt power levels
Technical Specifications
Infineon
Power Management
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1EDF5673K, 1EDF5673F & 1EDS5663H
Eval Board GaN EiceDRIVER
Technical Docs (3)
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate