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Quantity | Price (inc GST) |
---|---|
1+ | CNY8.160 (CNY9.2208) |
10+ | CNY7.640 (CNY8.6332) |
100+ | CNY7.090 (CNY8.0117) |
500+ | CNY6.510 (CNY7.3563) |
1000+ | CNY6.460 (CNY7.2998) |
5000+ | CNY6.410 (CNY7.2433) |
Product Information
Product Overview
The IKP15N60T is a Low Loss IGBT in TrenchStop® and field-stop technology with soft, fast recovery anti-parallel emitter controlled HE diode. The TrenchStop® IGBT technology leads to significant improvement of static as well as dynamic performance of the device, due to combination of TrenchStop®-cell and field-stop concept. The combination of IGBT with soft recovery emitter controlled diode further minimizes the turn-ON losses. The highest efficiency is reached due to the best compromise between switching and conduction losses.
- Lowest Vce (sat) drop for lower conduction losses
- Low switching losses
- Easy parallel switching capability due to positive temperature coefficient in Vce (sat)
- Very soft, fast recovery anti-parallel emitter controlled HE diode
- High ruggedness, temperature stable behaviour
- Low EMI emissions
- Low gate charge
- Very tight parameter distribution
- Highest efficiency - Low conduction and switching losses
- High device reliability
- 5µs Short-circuit withstand time
- Green product
- Halogen-free
Applications
Power Management, Alternative Energy, Consumer Electronics, HVAC, Industrial
Technical Specifications
30A
130W
TO-220
175°C
-
No SVHC (21-Jan-2025)
2.05V
600V
3Pins
Through Hole
-
Technical Docs (3)
Associated Products
5 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Germany
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate