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IKW50N60H3FKSA1
IGBT, 100 A, 1.85 V, 333 W, 600 V, TO-247, 3 Pins
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ManufacturerINFINEON
Manufacturer Part NoIKW50N60H3FKSA1
Order Code2480890
Also Known AsIKW50N60H3, SP000852244
Technical Datasheet
4 In Stock
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4 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY38.420 (CNY43.4146) |
| 10+ | CNY32.180 (CNY36.3634) |
| 100+ | CNY23.070 (CNY26.0691) |
| 500+ | CNY21.410 (CNY24.1933) |
| 1000+ | CNY19.760 (CNY22.3288) |
Price for:Each
Minimum: 1
Multiple: 1
CNY38.42 (CNY43.41 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIKW50N60H3FKSA1
Order Code2480890
Also Known AsIKW50N60H3, SP000852244
Technical Datasheet
Continuous Collector Current100A
Collector Emitter Saturation Voltage1.85V
Power Dissipation333W
Collector Emitter Voltage Max600V
Transistor Case StyleTO-247
No. of Pins3Pins
Operating Temperature Max175°C
Transistor MountingThrough Hole
Product Range-
MSL-
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IKW50N60H3 is a High Speed IGBT in Trench and field-stop technology with soft, fast recovery anti-parallel diode. The high speed device is used to reduce the size of the active components (25 to 70kHz). The high speed 3 family provides the best compromise between switching and conduction losses. The key feature of this family is a MOSFET-like turn-OFF switching behaviour, leading to low turn-OFF losses.
- Designed specifically to replace planar MOSFETs in applications switching @ frequencies below 70kHz
- Low switching losses for high efficiency
- Fast switching behaviour with low EMI emissions
- Optimized diode for target applications, meaning further improvement in switching losses
- Low gate resistor selection possible (down to 5Ω) whilst maintaining excellent switching behaviour
- Short-circuit capability
- Excellent performance
- Low switching and conduction losses
- Very good EMI behaviour
- Small gate resistor for reduced delay time and voltage overshoot
- Best-in-class IGBT efficiency and EMI behaviour
- Packaged with and without freewheeling diode for increased design freedom
- Green product
- Halogen-free
Applications
Alternative Energy, Power Management
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Continuous Collector Current
100A
Power Dissipation
333W
Transistor Case Style
TO-247
Operating Temperature Max
175°C
Product Range
-
SVHC
No SVHC (21-Jan-2025)
Collector Emitter Saturation Voltage
1.85V
Collector Emitter Voltage Max
600V
No. of Pins
3Pins
Transistor Mounting
Through Hole
MSL
-
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:China
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00443