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IPB025N08N3GATMA1
Power MOSFET, N Channel, 80 V, 120 A, 0.002 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB025N08N3GATMA1
Order Code1775525
Also Known AsIPB025N08N3 G, SP000311980
Technical Datasheet
2,331 In Stock
1,000 more incoming. You can reserve stock now
2331 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY34.150 (CNY38.5895) |
| 10+ | CNY24.970 (CNY28.2161) |
| 100+ | CNY18.730 (CNY21.1649) |
| 500+ | CNY17.410 (CNY19.6733) |
| 1000+ | CNY16.080 (CNY18.1704) |
Price for:Each
Minimum: 1
Multiple: 1
CNY34.15 (CNY38.59 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB025N08N3GATMA1
Order Code1775525
Also Known AsIPB025N08N3 G, SP000311980
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds80V
Continuous Drain Current Id120A
Drain Source On State Resistance0.002ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max2.8V
Power Dissipation300W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB025N08N3 G is a N-channel Power MOSFET with performance leading benchmark OptiMOS™ technology. It is the market leader in highly efficient solutions for power generation, power supply and power consumption applications.
- Optimized technology for DC-to-DC converters
- Excellent gate charge x RDS (ON) product (FOM)
- Superior thermal resistance
- Dual sided cooling
- Low parasitic inductance
- Normal level
- 100% avalanche tested
- Ideal for high frequency switching and synchronous rectification
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Consumer Electronics, Communications & Networking, Motor Drive & Control, LED Lighting, Automotive
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
120A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
300W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
80V
Drain Source On State Resistance
0.002ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
2.8V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (1)
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Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.002