IPB038N12N3GATMA1
Power MOSFET, N Channel, 120 V, 120 A, 3800 µohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 50+ | CNY20.550 (CNY23.2215) |
| 200+ | CNY19.430 (CNY21.9559) |
| 500+ | CNY18.300 (CNY20.679) |
Product Information
Product Overview
The IPB038N12N3 G is an OptiMOS™ N-channel Power MOSFET offers at the same time the lowest ON-state resistances of the industry and the fastest switching behaviour, allowing for the achievement of outstanding performance in a wide range of applications. The 120V OptiMOS™ technology gives new possibilities for optimized solutions.
- Excellent gate charge x RDS (ON) product (FOM)
- Very low ON-resistance R DS(on)
- Excellent gate charge x RDS (NO) product (FOM)
- MSL1 rated 2
- Environmentally friendly
- Increased efficiency
- Highest power density
- Less paralleling required
- Smallest board-space consumption
- Easy-to-design products
- N-channel, normal level
- Qualified according to JEDEC for target applications
- Halogen-free, Green device
Applications
Power Management, Motor Drive & Control, Computers & Computer Peripherals, Portable Devices, LED Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
120A
TO-263 (D2PAK)
10V
300W
175°C
-
No SVHC (21-Jan-2025)
120V
3800µohm
Surface Mount
3V
3Pins
-
MSL 1 - Unlimited
Technical Docs (3)
Associated Products
1 Product Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate