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IPB320N20N3GATMA1
Power MOSFET, N Channel, 200 V, 34 A, 0.028 ohm, TO-263 (D2PAK), Surface Mount
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ManufacturerINFINEON
Manufacturer Part NoIPB320N20N3GATMA1
Order Code2212854
Also Known AsIPB320N20N3 G, SP000691172
Technical Datasheet
19,493 In Stock
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2543 Next business day delivery available(Shanghai stock)
16950 Delivery in 5-6 Business Days(UK stock)
| Quantity | Price (inc GST) |
|---|---|
| 1+ | CNY28.730 (CNY32.4649) |
| 10+ | CNY18.450 (CNY20.8485) |
| 100+ | CNY14.700 (CNY16.611) |
| 500+ | CNY14.340 (CNY16.2042) |
| 1000+ | CNY12.130 (CNY13.7069) |
Price for:Each
Minimum: 1
Multiple: 1
CNY28.73 (CNY32.46 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPB320N20N3GATMA1
Order Code2212854
Also Known AsIPB320N20N3 G, SP000691172
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds200V
Continuous Drain Current Id34A
Drain Source On State Resistance0.028ohm
Transistor Case StyleTO-263 (D2PAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation136W
No. of Pins3Pins
Operating Temperature Max175°C
Product Range-
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Product Overview
The IPB320N20N3 G is a N-channel Power MOSFET with performance leading OptiMOS™ benchmark technology. It is perfectly suited for synchronous rectification in 48V systems, DC-to-DC converters, uninterruptable power supplies (UPS) and inverters.
- Industry's lowest RDS (ON)
- Lowest Qg and Qgd
- World's lowest FOM, MSL 1 rated
- Highest efficiency
- Highest power density
- Minimal device paralleling required
- Environmentally friendly
- Easy-to-design-in products
- Ideal for high-frequency switching and synchronous rectification
- Qualified according to JEDEC for target application
- Halogen-free, Green device
Applications
Industrial, Audio, LED Lighting, Motor Drive & Control, Power Management, Lighting
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
34A
Transistor Case Style
TO-263 (D2PAK)
Rds(on) Test Voltage
10V
Power Dissipation
136W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
200V
Drain Source On State Resistance
0.028ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
-
MSL
MSL 1 - Unlimited
Technical Docs (2)
Associated Products
1 Product Found
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.00181