IPB65R190CFDATMA1
Power MOSFET, N Channel, 700 V, 17.5 A, 0.171 ohm, TO-263 (D2PAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY17.500 (CNY19.775) |
| 500+ | CNY16.540 (CNY18.6902) |
| 1000+ | CNY13.970 (CNY15.7861) |
Product Information
Product Overview
The IPB65R190CFD is a 650V CoolMOS™ CFD2 N-channel Power MOSFET with ultra-fast body diode. The CoolMOS™ is a revolutionary technology for high voltage power MOSFET, designed according to the super-junction(SJ) principle and pioneered by Infineon Technologies. This CoolMOS™ CFD2 combines the experience of the leading SJ MOSFET supplier with high class innovation. The device provides all benefits of a fast switching SJ MOSFET while offering an extremely fast and robust body diode. This combination of extremely low switching and conduction losses together with highest robustness make especially resonant switching applications more reliable, more efficient, lighter and cooler.
- Outstanding CoolMOS™ quality
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Technical Specifications
N Channel
17.5A
TO-263 (D2PAK)
10V
-
150°C
-
700V
0.171ohm
Surface Mount
4V
3Pins
-
Associated Products
4 Products Found
Legislation and Environmental
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
RoHS
RoHS
Product Compliance Certificate