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IPD5N25S3430ATMA1
Power MOSFET, N Channel, 250 V, 5 A, 0.37 ohm, TO-252 (DPAK), Surface Mount
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| Quantity | Price (inc GST) |
|---|---|
| 100+ | CNY5.040 (CNY5.6952) |
| 500+ | CNY4.430 (CNY5.0059) |
| 1000+ | CNY3.960 (CNY4.4748) |
| 5000+ | CNY3.910 (CNY4.4183) |
Price for:Each (Supplied on Cut Tape)
Minimum: 100
Multiple: 1
CNY504.00 (CNY569.52 inc GST)
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Product Information
ManufacturerINFINEON
Manufacturer Part NoIPD5N25S3430ATMA1
Order Code2803394RL
Product RangeOptiMOS T
Also Known AsIPD5N25S3-430, SP000876584
Technical Datasheet
Channel TypeN Channel
Drain Source Voltage Vds250V
Continuous Drain Current Id5A
Drain Source On State Resistance0.37ohm
Transistor Case StyleTO-252 (DPAK)
Transistor MountingSurface Mount
Rds(on) Test Voltage10V
Gate Source Threshold Voltage Max3V
Power Dissipation41W
No. of Pins3Pins
Operating Temperature Max175°C
Product RangeOptiMOS T
Qualification-
MSLMSL 1 - Unlimited
SVHCNo SVHC (21-Jan-2025)
Technical Specifications
Channel Type
N Channel
Continuous Drain Current Id
5A
Transistor Case Style
TO-252 (DPAK)
Rds(on) Test Voltage
10V
Power Dissipation
41W
Operating Temperature Max
175°C
Qualification
-
SVHC
No SVHC (21-Jan-2025)
Drain Source Voltage Vds
250V
Drain Source On State Resistance
0.37ohm
Transistor Mounting
Surface Mount
Gate Source Threshold Voltage Max
3V
No. of Pins
3Pins
Product Range
OptiMOS T
MSL
MSL 1 - Unlimited
Technical Docs (3)
Legislation and Environmental
Country of Origin:
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Country in which last significant manufacturing process was carried outCountry of Origin:Malaysia
Country in which last significant manufacturing process was carried out
Tariff No:85412900
US ECCN:EAR99
EU ECCN:NLR
RoHS Compliant:Yes
RoHS
RoHS Phthalates Compliant:Yes
RoHS
SVHC:No SVHC (21-Jan-2025)
Download Product Compliance Certificate
Product Compliance Certificate
Weight (kg):.000426